september 2001 ? 2001 fairchild semiconductor corporation FDD6690S rev c (w) FDD6690S 30v n - channel powertrench ? ? ? ? syncfet ? general description the FDD6690S is designed to replace a single mosfet and schottky diode in synchronous dc:dc power supplies. this 30v mosfet is designed to maximize power conversion efficiency, providing a low r ds(on) and low gate charge. the FDD6690S includes an integrated schottky diode using fairchild?s monolithic syncfet technology. the performance of the FDD6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the fdd6690a in parallel with a schottky diode. applications ? dc/dc converter ? motor drives features ? 40 a, 30 v r ds(on) = 16 m ? @ v gs = 10 v r ds(on) = 24 m ? @ v gs = 4.5 v ? includes syncfet schottky body diode ? low gate charge (17nc typical) ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability . g s d to-252 s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current ? continuous (note 3) 40 a ? pulsed (note 1a) 100 power dissipation (note 1) 50 (note 1a) 2.8 p d (note 1b) 1.3 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r jc thermal resistance, junction-to-case (note 1) 2.5 c/w r ja thermal resistance, junction-to-ambient (note 1a) 45 c/w r ja thermal resistance, junction-to-ambient (note 1b) 96 c/w package marking and ordering information device marking device reel size tape width quantity FDD6690S FDD6690S 13?? 16mm 2500 units FDD6690S
FDD6690S rev c (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) w dss drain-source avalanche energy single pulse, v dd = 15 v, i d =14a 245 mj i ar drain-source avalanche current 14 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 1 ma 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 19 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gssf gate?body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 1 2 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c ?3.3 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 10 a v gs = 4.5 v, i d = 8 a v gs = 10 v, i d = 10 a, t j = 125 c 10 15.5 16 16 24 26 m ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v 60 a g fs forward transconductance v ds = 15 v, i d = 10 a 27 s dynamic characteristics c iss input capacitance 2010 pf c oss output capacitance 526 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 186 pf switching characteristics (note 2) t d(on) turn?on delay time 10 18 ns t r turn?on rise time 10 18 ns t d(off) turn?off delay time 34 55 ns t f turn?off fall time v ds = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 14 23 ns q g total gate charge 17 24 nc q gs gate?source charge 6.2 nc q gd gate?drain charge v ds = 15 v, i d = 10 a, v gs = 10 v 5.5 nc drain?source diode characteristics v sd drain?source diode forward voltage v gs = 0 v, i s = 3.5 a (note 2) v gs = 0 v, i s = 7 a (note 2) 0.49 0.56 0.7 v t rr diode reverse recovery time 20 ns q rr diode reverse recovery charge i f = 3.5 a, d if /d t = 300 a/s (note 3) 19.7 nc FDD6690S
FDD6690S rev c (w) d r p ds(on) electrical characteristics t a = 25c unless otherwise noted notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) r ja = 45c/w when mounted on a 1in 2 pad of 2 oz copper b) r ja = 96c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. maximum current is calculated as: where p d is maximum power dissipation at t c = 25c and r ds(on) is at t j(max) and v gs = 10v. package current limitation is 21a FDD6690S
FDD6690S rev c (w) typical characteristics 0 10 20 30 40 50 0123 v ds , drain-source voltage (v) 5.0v 4.5v 4.0v 3.5v v gs = 10v 6.0v 0.6 1 1.4 1.8 2.2 2.6 0 1020304050 i d , drain current (a) v gs = 4.0v 6.0v 8.0v 10v 5.0v 4.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.4 0.7 1 1.3 1.6 1.9 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 10a v gs = 10v 0 0.01 0.02 0.03 0.04 0.05 0.06 246810 v gs , gate to source voltage (v) i d = 5a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 1.5 2.5 3.5 4.5 5.5 v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = 5v 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDD6690S
FDD6690S rev c (w) typical characteristics 0 2 4 6 8 10 036912151821 q g , gate charge (nc) i d =10a v ds = 5v 15v 10v 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 s r ds(on) limit v gs = 10v single pulse r ja = 96 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 96c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 96 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. FDD6690S
FDD6690S rev c (w) typical characteristics (continued) syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 12 shows the reverse recovery characteristic of the FDD6690S. figure 12. FDD6690S syncfet body diode reverse recovery characteristic. for comparison purposes, figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size mosfet produced without syncfet (fdd6690a). figure 13. non-syncfet (fdd6690a) body diode reverse recovery characteristic. schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. this will increase the power in the device. figure 14. syncfet body diode reverse leakage versus drain-source voltage and temperature. 10ns/div 3a/div FDD6690S 10ns/div 3a/div 0.00001 0.0001 0.001 0.01 0.1 0 10 20 30 v ds , reverse voltage (v) 125 o c 25 o c 0v 0v
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
|
